Quantum creep and pinning properties of oxygen-deficient films
- 1 July 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (2) , 1366-1381
- https://doi.org/10.1103/physrevb.54.1366
Abstract
A high sensitivity capacitance torquemeter has been used for a comprehensive investigation of the induced current densities and dynamic relaxation rates in a film with nominal oxygen content varying between =6.55 and =7.0. The dynamic relaxation rate Q does not extrapolate to zero at T=0 K, indicating the presence of quantum creep. By changing the oxygen content of the film it is possible to investigate the relation between the quantum creep rate Q(0) and the normal-state resistivity (0) at low temperature. Although Q(0) increases monotonically with , it is found that Q(0) is not proportional to (0), in contrast to the predictions of a theory based on dissipative tunneling of collectively pinned single vortices [Blatter et al., Rev. Mod. Phys. 66, 1125 (1994)]. The experimental results imply that in quantum creep takes place in a transition regime between Hall tunneling and dissipative tunneling. For lower oxygen contents the quantum creep regime moves towards the dissipative limit. For each oxygen content the characteristic pinning energy (0) at T=0 is obtained by a linear extrapolation to T= 0 K of the T/Q versus T curves. The critical current density at T=0 is determined independently by a linear extrapolation of the measured ln versus T curves. A power-law relation (0)∝[(0) with p≊ 0.5 is found, indicating single vortex pinning at higher temperatures. This is confirmed by a detailed analysis of the measured current densities and relaxation rates by means of the generalized inversion scheme developed by Schnack et al. [Phys. Rev. B 48, 13 178 (1993)]. For ≥ 6.6 at = 0.6 T and for ≥ 6.7 at = 2.0 T the calculated temperature dependence of and
Keywords
This publication has 51 references indexed in Scilit:
- Low Temperature Action inPhysical Review Letters, 1995
- Vortex tunneling in thin films of YBa2Cu3O7−δ and YBa2Cu4O8 in fields up to 7 TPhysica C: Superconductivity and its Applications, 1994
- Magnetic field dependent quantum flux creep in Bi2Sr2Ca2Cu3O10Physica C: Superconductivity and its Applications, 1994
- Flux creep by quantum tunneling in YBa2Cu3O7−δPhysica C: Superconductivity and its Applications, 1993
- Quantum tunneling of flux lines in single-crystal with columnar defectsPhysical Review B, 1993
- Flux motion by quantum tunnelingPhysica C: Superconductivity and its Applications, 1991
- Low-temperature magnetic relaxation in : Evidence for quantum tunneling of vorticesPhysical Review B, 1991
- Thermally activated flux motion near the absolute zeroPhysica C: Superconductivity and its Applications, 1991
- Relaxation effects in highTcsuperconductorsPhysica Scripta, 1988
- Hard Superconductivity: Theory of the Motion of Abrikosov Flux LinesReviews of Modern Physics, 1964