Linearity of high Al-content AlGaN/GaN HEMTs
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 201-202
- https://doi.org/10.1109/drc.2001.937931
Abstract
This work will address the advancements in the linearity of AlGaN/GaN HEMTs. This is the first reported linearity result for high-Al content devices, and it is the first reported result of linearity for nitride-based HEMTs under both transmitter and receiver types of conditions. When the device technology matures, it will have commercial and military applications in wireless base stations, satellite communications, and radar.Keywords
This publication has 1 reference indexed in Scilit:
- High Al-content AlGaN/GaN MODFETs for ultrahigh performanceIEEE Electron Device Letters, 1998