A 16 W, 40% efficient, continuous wave, 4H SiC, L-band SIT
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Application of high power silicon carbide transistors at radar frequenciesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The mixed mode 4H-SiC SIT as an S-band microwave power transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996