Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE

13 February 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (4) , 189-190
https://doi.org/10.1049/el:19860132

Abstract

The effect of annealing on Si-doped GaAs and Al_0·3Ga_0·7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA centre reported in bulk n-GaAs appeared. The results suggest evidence that annealing converts some of the Si donors into complexes like the SA centre, which does not act as a donor.

Keywords

PHOTOLUMINESCENCE
MBE
III-V SEMICONDUCTORS
SA CENTRE
IMPURITY ELECTRON STATES
DONOR CONCENTRATION
ANNEALING
BROAD LUMINESCENCE CHARACTERISTIC
HEAVILY DOPED SAMPLES
GAAS:SI
MOLECULAR BEAM EPITAXY
AL0.3GA0.7AS:SI
SI DOPANT
ALGAAS LAYERS
CARRIER DENSITY

This publication has 0 references indexed in Scilit: