Preparation of ZnO Films by Low-pressure Organometallic Chemical Vapor Deposition
- 1 December 1993
- journal article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 22 (12) , 2133-2136
- https://doi.org/10.1246/cl.1993.2133
Abstract
Using zinc acetate as a precursor, ZnO films have been prepared on sapphire () substrates at pressures of 2.7 × 10−2 and 6.7 × 10−3 Pa. The deposition rate increased with substrate temperature. The crystal structure of ZnO film was dependent on the substrate temperature and H2O partial pressure. In particular, oriented () ZnO films have been formed at 350 °C at 2.7 × 10−2 Pa.This publication has 3 references indexed in Scilit:
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