Characterization of Amorphous Si: H Films Prepared by rf Planar Magnetron Sputtering
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (S2)
- https://doi.org/10.7567/jjaps.21s2.209
Abstract
Hydrogenated amorphous silicon films were prepared by rf planar magnetron reactive sputtering. We describe the influence of the preparation parameters on the physical properties and on the hydrogen content in the films. The hydrogen content C H and the ratio of C SiH to C SiH2 are major factors governing the film properties. The a-Si: H films with the high resistivity (7.2×1010∼1.2×1011 Ω·cm) and the high ratio of photo-conductivity to dark-conductivity (σph/σd∼1.4×104) were obtained at the deposition pressure of 3×10-4 Torr and the substrate temperature of 250°C.Keywords
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