Phosphorus doping in low-pressure silicon selective epitaxial growth

• 1 January 1993
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 11  (1) , 117-119
• https://doi.org/10.1116/1.586713

Abstract

Keywords

• RADIO FREQUENCY
• FLOW RATE
• MATERIALS SCIENCE
• LOW PRESSURE
• PHOSPHORUS
• BIPOLAR TRANSISTOR
• EPITAXIAL GROWTH