Synthesis and characterization of InAs multiple quantum wells in a (111)B GaAs matrix
- 1 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (9) , 997-999
- https://doi.org/10.1063/1.108512
Abstract
We investigate the molecular beam epitaxy of InAs quantum wells in a [111]-oriented GaAs matrix. High-resolution x-ray diffraction measurements show the structural coherence of the samples to be maintained beyond the point where relaxation occurs in [100]-oriented structures. Low-temperature photoluminescence measurements reveal linewidths as narrow as 5 meV and show the formation of high-quality heterostructures along the [111] direction with its well-known complications for molecular beam epitaxial growth. We observe blue shifts of the luminescence lines due to the internal, piezoelectric fields. The demonstration of room-temperature emission from our samples shows these structures to be promising candidates for optoelectronic applications.Keywords
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