Microcavity GalaAs/GaAs surface-emitting laser with I th = 6 mA
- 29 January 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (3) , 134-136
- https://doi.org/10.1049/el:19870095
Abstract
A circular buried microcavity 7 μm long and 6 μm in diameter has been realised. We obtained Ith = 6mA, ηd = 9% and peak power ≥1 mW at 20.5°C at single mode. The first CW operation of a GaAlAs/GaAs surface-emitting laser with Ith = 4.5 mA at 77 K was also realised.Keywords
This publication has 0 references indexed in Scilit: