HIGH VOLTAGE SWITCHING P-CHANNEL STRUCTURE FOR CMOS ARCHITECTURES

1 September 1988

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 49 (C4) , C4-753
https://doi.org/10.1051/jphyscol:19884157

Abstract

An analysis of a P-ch High Voltage structure fully compatible with all CMOS architectures is presented. It points out the critical role played by drain extension layer on electrical device performance, and by the field thick oxide periphery on the device reliability. These results are useful in designing HV process compatible devices in advanced CMOS technology

Keywords

CMOS ARCHITECTURES
CHANNEL STRUCTURE
HIGH VOLTAGE
VOLTAGE SWITCHING
SWITCHING P CHANNEL

This publication has 0 references indexed in Scilit: