Impact of two-step-recessed gate structureon RF performance of InP-based HEMTs
- 22 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (2) , 220-222
- https://doi.org/10.1049/el:19980166
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 0.1-μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVDPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel EffectsJapanese Journal of Applied Physics, 1994
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992