Charge accumulation and mobility in thin dielectric MOS transistors
- 1 September 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (9) , 833-841
- https://doi.org/10.1016/0038-1101(82)90170-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Concerning the onset of heavy inversion in MIS devicesIEEE Transactions on Electron Devices, 1974
- Investigation of the MOST channel conductance in weak inversionSolid-State Electronics, 1973
- Statistical considerations in MOSFET calculationsSolid-State Electronics, 1967