Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition

• 1 April 1977
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 16  (4) , 553-557
• https://doi.org/10.1143/jjap.16.553

Abstract

Keywords

• ROOM TEMPERATURE
• SINGLE CRYSTAL
• CURRENT DENSITY