Reactive ion etched InP/GaInAs multiple quantum well rib waveguides grown by solid source MBE

27 October 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (22) , 1395-1396
https://doi.org/10.1049/el:19880954

Abstract

Using InP/GaInAs MQW material, grown by solid source MBE, rib waveguides have been fabricated by reactive ion etching in a methane/hydrogen plasma. Single mode propagation losses were found to be as low as 1.4 dB/cm.

Keywords

RIB WAVEGUIDES
SOLID SOURCE MBE
III-V SEMICONDUCTORS
METHANE/H PLASMA
EPITAXIAL GROWTH
1.4 DB
SINGLE MODE PROPAGATION LOSSES
MULTIPLE QUANTUM WELL
INP-GAINAS
REACTIVE ION ETCHING
MQW MATERIAL
OPTICAL WAVEGUIDE FABRICATION

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