An amorphous SiC:H emitter heterojunction bipolar transistor

1 June 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (6) , 311-312
https://doi.org/10.1109/EDL.1985.26135

Abstract

After confirming the successful application of the amorphous SiC:H(a-SiC:H)/crystalline Si(c-Si) heterostructure in a solar cell and considering its prospective application in Bi-CMOS devices, an attempt has been made to apply the same in the fabrication of a heterojunction bipolar transistor. A p-n-p heterojunction bipolar transistor with a wide band-gap boron-doped amorphous SiC:H emitter and crystalline Si (base, collector) has been realized and is reported here for the first time. Good device performance has been observed at the a-SiC:H deposition temperature of 450°C. Preliminary results gave a current gain,h_{FE(\max)}) of 50 at a current density of approximately 2.4 A/cm2(base dose 2 × 1012/cm2, width ≃ 0.4 µm). Temperature dependence of the transistorh_{FE}-I_{C}characteristics was also studied.

Keywords

This publication has 0 references indexed in Scilit: