A new multilevel interconnection system for submicrometer VLSI's using multilayered dielectrics of plasma Silicon Oxide and low-thermal-expansion polyimide
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (3) , 621-627
- https://doi.org/10.1109/T-ED.1987.22972
Abstract
A new multilevel interconnection system for submicrometer VLSI's has been developed that utilizes multilayered dielectrics of inorganic and organic materials. This system was achieved by using the low-thermal-expansion polyimide PIQ-L100 underlying plasma CVD silicon oxide and doing an etch-back of overthick PIQ-L100. As the most important parameters of this system, the multilayered dielectric thickness and etch-back process of overthick PIQ-L100 were investigated.Keywords
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