Relaxation time approximation and mixing of hot and cold electron populations
- 4 June 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (12) , 1173-1175
- https://doi.org/10.1049/el:19920740
Abstract
Relaxation time models found in most hydrodynamic device simulators fail in the presence of abruptly decreasing electric fields. Such fields are encountered at MOSFET drain junctions and lead to carrier distribution functions composed of two distinct populations: one hot and one cold. An approach which expresses features of both populations and produces more accurate simulation results is presented.Keywords
This publication has 0 references indexed in Scilit: