Overheating In Silicon During Pulsed-Laser Irradiation?
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Nanosecond resolution time-resolved x-ray diffraction measurements of thermal strain have been used to measure the interface temperatures in silicon during pulsed-laser irradiation. The pulsed-time-structure of the Cornell High Energy Synchrotron Source (CHESS) was used to measure the temperature of the liquid-solid interface of silicon during melting with an interface velocity of 11 m/s, at a time of near zero velocity, and at a regrowth velocity of 6 m/s. The results of these measurements indicate 110 K difference between the temperature of the interface during melting and regrowth, and the measurement at zero velocity shows that most of the difference is associated with undercooling during the regrowth phase.Keywords
This publication has 3 references indexed in Scilit:
- Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerationsApplied Physics Letters, 1985
- Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealingApplied Physics Letters, 1983
- RAPID SOLIDIFICATIONPublished by Elsevier ,1980