Step bunching in chemical vapor deposition of 6H– and 4H–SiC on vicinal SiC(0001) faces
- 26 June 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (26) , 3645-3647
- https://doi.org/10.1063/1.114127
Abstract
Step bunching and terrace widening on 6H– and 4H–SiC epilayers on vicinal {0001} faces have been studied with atomic force microscopy (AFM) and transmission electron microscopy (TEM). Macroscopically, hill‐and‐valley structures are observed on off‐oriented (0001)Si faces, whereas surfaces are rather flat on off‐oriented (0001̄)C faces. High‐resolution TEM analysis revealed that 3 bilayer‐height steps are dominant on 6H–SiC and 4 bilayer‐height steps on 4H–SiC. The distribution of step height and terrace width are also investigated.Keywords
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