Effect of carrier escape time on the performance of semi-insulating photorefractive self-electro-optic effect devices
- 14 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (24) , 3088-3090
- https://doi.org/10.1063/1.109144
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Cr-doped GaAs/AlGaAs semi-insulating multiple quantum well photorefractive devicesApplied Physics Letters, 1993
- Observation of Wannier-Stark localization in shallow superlatticesPublished by SPIE-Intl Soc Optical Eng ,1992
- Photorefractive quantum wells: transverse Franz–Keldysh geometryJournal of the Optical Society of America B, 1992
- High-speed photodiffractive effect in semi-insulating CdZnTe/ZnTe multiple quantum wellsOptics Letters, 1992
- High sensitivity optical image processing device based on CdZnTe/ZnTe multiple quantum well structuresApplied Physics Letters, 1991
- Quantum well carrier sweep out: relation to electroabsorption and exciton saturationIEEE Journal of Quantum Electronics, 1991
- Resonant photodiffractive effect in semi-insulating multiple quantum wellsJournal of the Optical Society of America B, 1990
- Resonant photodiffractive four-wave mixing in semi-insulating GaAs/AlGaAs quantum wellsOptics Letters, 1990
- Tunable superlattice p-i-n photodetectors: characteristics, theory, and applicationIEEE Journal of Quantum Electronics, 1988
- Free carrier lifetime in semi-insulating GaAs from time-resolved band-to-band photoluminescenceJournal of Applied Physics, 1984