High performance DFB-MQW lasers at 1.5 μm grown by GSMBE

15 February 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (4) , 236-238
https://doi.org/10.1049/el:19900159

Abstract

1.5 μm GaInAs multiquantum well distributed feedback lasers have been successfully fabricated on InP grating substrate by GSMBE. DFB mode oscillation at high output power (50 mW) and narrow linewidth (1.3 MHz) have been obtained.

Keywords

III-V SEMICONDUCTORS
DISTRIBUTED FEEDBACK LASERS
NARROW LINEWIDTH
1.5 MICRON
MULTIQUANTUM WELL
DFB MODE OSCILLATION
OPTICAL COMMUNICATION LIGHT SOURCE
HIGH OUTPUT POWER
GAINASP-GAINAS-INP
GAS SOURCE MBE
INP GRATING SUBSTRATE
GSMBE
DFB-MQW LASERS
SEMICONDUCTOR LASERS
50 MW