Two-Josephson-junction interferometer memory cell for n.d.r.o.
- 29 September 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (20) , 596-598
- https://doi.org/10.1049/el:19770429
Abstract
A single-flux-quantum random-access memory cell for nondestructive read-out and write has been designed and successfully simulated. The binary information is stored in an interferometer with two unequal Josephson junctions. No bias current is needed to store the information. Reasonable operation margins are obtained.Keywords
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