MeV Implantation For CMOS Applications
- 9 April 1985
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 530, 23-29
- https://doi.org/10.1117/12.946463
Abstract
The use of MeV ion implantation for CMOS device fabrication is illustrated with a description of an n-type, retrograde well process which is being developed for 1 micron-scale devices. Process design and integration issues are described along with selected results for B and P ion ranges, process modeling and device characteristics.© (1985) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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