Resonant tunneling through two impurities in disordered barriers
- 15 December 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (24) , R17021-R17024
- https://doi.org/10.1103/physrevb.52.r17021
Abstract
In short lateral barriers of GaAs metal-semiconductor field-effect transistor, we have observed resonant tunneling through two impurities. Contrary to a steplike feature in I(V) due to an elementary one-impurity resonance, the two-impurity resonance manifests itself as a peak in the current. A magnetic field strongly suppresses the peak amplitude but has little effect on its width. We analyze the magnetic-field and temperature dependences of the two-impurity resonances.Keywords
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