Extension of the Gunn-effect theory given by Robson and Mahrous
- 1 July 1966
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 2 (7) , 260-261
- https://doi.org/10.1049/el:19660220
Abstract
Using Fourier analysis, expressions are derived for the power output and efficiency of a cavity-controlled Gunn-effect oscillator. This treatment predicts an optimum efficiency of 7.2% when the applied bias voltage is equal to 1.9 times the threshold voltage and the load resistance is equal to 8.6 times the low-field resistance of the GaAs wafer. The theoretical results are compared with the experimental resulu report by Dow, Mosher and Vane.Keywords
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