Phonons in thin GaAs quantum wires

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Abstract
Phonon frequencies and potentials for an array of thin rectangular GaAs wires embedded in AlAs are calculated within a microscopic scheme. The confined and interface character of optical modes are clearly evident from their dispersion and from the spatial profiles. Our results allow us to conclude that macroscopic models based on the dielectric continuum scheme are adequate to describe confined phonon profiles at wave vectors relevant to el-ph scattering, in contrast with approaches based on mechanical boundary conditions, which yield modes with the wrong symmetry sequence. The implications for electron-phonon scattering rates are discussed.