Polysilicon gate etching in high density plasmas. II. X-ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine-based chemistry
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 1796-1806
- https://doi.org/10.1116/1.588559
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