Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification
- 9 May 2005
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 97 (10) , 104509
- https://doi.org/10.1063/1.1903109
Abstract
We report an ambipolar operation in field-effect transistors of C 60 and metallofullerene Dy @ C 82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the goldsurface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves.This publication has 27 references indexed in Scilit:
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