In-situ Observation of Melt Growth Process of Bi (11\bar1) Thin Films by means of Transmission Electron Microscopy
- 1 January 1986
- journal article
- Published by Japan Institute of Metals in Transactions of the Japan Institute of Metals
- Vol. 27 (12) , 939-948
- https://doi.org/10.2320/matertrans1960.27.939
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- In Situ Heating Device for Real Time X-Ray Topography on Crystal Growth from the MeltJapanese Journal of Applied Physics, 1984
- In Situ Observation on Melt Growth Process of Tin Crystal by Means of Synchrotron X-Ray TopographyJapanese Journal of Applied Physics, 1984
- Initial stages of eutectic solidificationActa Metallurgica, 1981
- Facetting behaviour of Al2Cu during solidificationJournal of Crystal Growth, 1981
- In-situ electron microscopy of some solidification processes in metallic alloysJournal of Crystal Growth, 1981
- Technique for the video display of X-ray topographic images and its application to the study of crystal growthJournal of Crystal Growth, 1974
- Gradient hot-stage electron microscopy of binary metallic solid/liquid interfacesJournal of Crystal Growth, 1972
- Determination of absolute solid-liquid interfacial free energies in metalsActa Metallurgica, 1969
- Observation of solidification and melting phenomena in metals using the electron microscopeActa Metallurgica, 1967
- Dislocation Etch Pits in BismuthJournal of Applied Physics, 1959