Process–property relationships between silicon selective epitaxial growth ambients and degradation of insulators
- 1 November 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 14 (6) , 3224-3227
- https://doi.org/10.1116/1.580217
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: