Interface states of modulation-doped AlGaAs/GaAs heterostructures

1 February 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (2) , 149-153
https://doi.org/10.1109/T-ED.1987.22900

Abstract

We have used the admittance spectroscopy to investigate interface states associated with heterojunction of modulation-doped AlGaAs/GaAs FET's. Anomalous frequency dispersion of the capacitance was observed. The results of the measurements were interpreted in terms of an equivalent circuit containing a series resistance of the two-dimensional electron gas in the ungated region between the gate and the source and drain electrodes. The maximum density of the interface states was found to be 1.3 × 1012cm-2. eV-1around 0.13 eV below the Ecedge of GaAs.

Keywords

GALLIUM ARSENIDE
SERIES RESISTANCE
HETEROJUNCTIONS
ADMITTANCE
HIGH ELECTRON MOBILITY TRANSISTOR
MOLECULAR BEAM EPITAXY
EQUIVALENT CIRCUIT
FREQUENCY
TWO DIMENSIONAL ELECTRON GAS
CAPACITANCE
ELECTRICAL IMPEDANCE
SCHOTTKY DIODE
SPECTROSCOPY

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