An isotropic two band model for hot electron transport in silicon: Including electron emission probability into SiO2

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Abstract
An isotropic two band model is proposed for electrons in silicon, that has the same density of states and magnitude of group velocity as those of the full band structure based on empirical pseudopotential method calculations. The band model and transport parameters are calibrated through extensive comparisons with Monte Carlo simulation results and various experiments related to electron transport in silicon. Specifically, the drift velocity, impact ionization coefficient, quantum yield, 2p core level line intensity and broadening from x‐ray photoemission spectroscopy have all been used in calibration. Through the study of electron emission at the Si/SiO2 interface in metal‐oxide‐semiconductor structures using the Monte Carlo method, it is demonstrated that the model has good accuracy in modeling high field transport phenomena in silicon.