Reactive ion etching lag investigation of oxide etching in fluorocarbon electron cyclotron resonance plasmas

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Abstract
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiO2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on rf power is proposed.

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