Low contact resistance nonalloyed ohmic contacts to Zn-implanted P + GaAs
- 13 October 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (21) , 891-892
- https://doi.org/10.1049/el:19830607
Abstract
Contact resistance of nonalloyed metal contacts to Zn-implanted shallow (∼1000 Å) p+ GaAs layers was investigated. Contact resistance as low as 9×10−7 Ωcm2 was achieved for evaporated Ti/Pt/Au contacts to Zn 40 keV and Zn 100 keV double-implanted layers with a peak concentration of 7×1019/cm3.Keywords
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