N-Channel gallium arsenide MISFET

• 1 January 1973
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1973.188675

Abstract

Keywords

• LEAKAGE CURRENT
• TIN
• GALLIUM ARSENIDE
• SHAPE
• FABRICATION
• FIELD EFFECT TRANSISTOR