On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10A) , L1775-1777
- https://doi.org/10.1143/jjap.29.l1775
Abstract
High-performance bottom-gate thin-film transistors (TFTs) with both polysilicon (poly-Si) and amorphous silicon (a-Si) have been fabricated, for the first time, using chemical-vapor-deposited a-Si film as a starting semiconductor material. The feature of this technology is that both TFTs can be produced in the same process and at the same time on a single substrate except for the local laser crystallization step of the a-Si. The field-effect mobilities were 60 cm2/V ·s for the poly-Si TFT and 1.3 cm2/V ·s for the a-Si TFT, respectively. Their on-off current ratios were more than 106.Keywords
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