Forecast of VLSI processing—A historical review of the first dry-processed IC
- 1 April 1979
- journal article
- review article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 26 (4) , 640-643
- https://doi.org/10.1109/t-ed.1979.19471
Abstract
The principles of the flat-plate, radial flow plasma reactor and its rapid proliferation into production at Texas Instruments will be reviewed. From this foundation it was logical to attempt the fabrication of a semiconductor integrated circuit by all dry means. An electrically operating double-level metal CCD shift register was fabricated in late 1975 with no liquids other than DI water and photoresist. Silicon, oxide, nitride, and aluminum were all plasma-etched. Photoresist was both developed and removed by novel dry means.Keywords
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