Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant

Abstract
A basic analysis is given to understand how a continual irradiation of atomic hydrogen (H) during molecular beam epitaxy (MBE) of GaAs could result in production of atomically smooth surfaces, abrupt heterointerfaces, and high‐quality epitaxial layers as required for many applications. Some interesting results related to the atomic‐scale growth mechanisms and atomic interactions are presented, and a growth model is proposed for atomic H‐assisted homoepitaxial MBE of GaAs. It is thought that atomic H is an effective surfactant reducing the surface and total energy of GaAs (001), and acts to provide favorable kinetic and energetic pathways to promote an ideal layer‐by‐layer two‐dimensional growth mode.

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