Anodic nitridation of silicon and silicon dioxide
- 1 May 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (5) , 978-982
- https://doi.org/10.1109/T-ED.1985.22056
Abstract
Anodic nitridation of Si wafers and SiO2films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge trapping properties were studied.Keywords
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