Quasi-Static Approach to Simulating Nonlinear GaAs FET Behavior

23 March 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 79, 402-404
https://doi.org/10.1109/mwsym.1979.1124082

Abstract

A technique is described for accurately predicting nonlinear performance of microwave GaAs field-effect transistors in arbitrary circuit embedding using a quasi-static device model. Excellent agreement with experimental results at X-band is demonstrated.

Keywords

GALLIUM ARSENIDE
VOLTAGE
MICROWAVE FETS
CIRCUIT SIMULATION
MICROWAVE DEVICES
FREQUENCY
POWER MEASUREMENT
GAIN MEASUREMENT
PERFORMANCE GAIN
CIRCUIT TOPOLOGY

This publication has 4 references indexed in Scilit:

A Technique for Predicting Large-Signal Performance of a GaAs MESFET
IEEE Transactions on Microwave Theory and Techniques, 1978
Analysis of intermodulation distortion in GaAs m.e.s.f.e.t. amplifiers
Electronics Letters, 1978
Large signal GaAs m.e.s.f.e.t. model and distortion analysis
Electronics Letters, 1978
Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.
Electronics Letters, 1977