The ordered–disordered transition in Si delta-doped GaAs

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Abstract
We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers (MLs) derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), and high resolution x-ray diffractometry (HRXRD) techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly localized two-dimensional variable range hopping (2D-VRH) transport under potential fluctuation disordered conditions (≳4 ML) is clearly observed. This observation is in good agreement with the SIMS and HRXRD data. Results from the intermediate case with 2–3 MLs are also discussed.

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