Total Dose Failure Levels of Some Vlsics
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (6) , 1449-1451
- https://doi.org/10.1109/tns.1980.4331049
Abstract
Two types of devices representative of very-largescale-integration, 64k dynamic RAMs and 68000 microprocessors, have been studied in a total dose ionizing radiation environment. Both types of parts show an improved hardness compared to earlier test results for large-scale-integrated dynamic RAMs and microprocessors. This indicates that the previously developed downward trend of radiation hardness versus circuit complexity may not continue to prevail.Keywords
This publication has 3 references indexed in Scilit:
- A single 5V 64K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Considerations for Hardening MOS Devices and Circuits for Low Radiation DosesIEEE Transactions on Nuclear Science, 1980
- The Influence of Silicon Surface Defects on MOS Radiation-SensitivityIEEE Transactions on Nuclear Science, 1976