Experimental evidence for index modulation by carrier depletionin SiGe∕Si multiple quantum well structures

9 August 2004

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 85 (6) , 887-889
https://doi.org/10.1063/1.1781371

Abstract

Experimental results for the refractive index variation obtained by hole depletion in Si Ge ∕ Si multiple quantum wells inserted in a reverse-biased p - i - n junction are reported. The electronic contribution to the index variation is unambiguously separated from the thermal one. Measured refractive index changes around 4.2 × 10 − 5 V − 1 are in quite good agreement with modeling.

Keywords

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