Suppressed sidewall injection magnetotransistor with focused emitter injection and carrier double deflection

1 September 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (9) , 395-397
https://doi.org/10.1109/EDL.1987.26672

Abstract

We present a new linear magnetic field sensor (MFS) made in standard CMOS technology with a sensitivity of 1.26 percent/mT (1 percent/T ≡ 0.01 T-1). The device is a dual-collector lateral magneto-transistor (LMT) with suppressed injection of the emitter sidewalls, confinement of the injection to the center bottom of the emitter-base junction, and double deflection of carriers. Desirable collector current levels can be set without major loss of sensitivity by choosing from a wide range of operating points.

Keywords

CMOS TECHNOLOGY
MAGNETIC SENSORS
CARRIER CONFINEMENT
MAGNETIC CONFINEMENT
SILICON
MAGNETIC DEVICES
MAGNETIC FIELDS
COUNCILS
MICROELECTRONICS
ACCELERATION

This publication has 0 references indexed in Scilit: