Novel Transparent and Electroconductive Amorphous Semiconductor: Amorphous AgSbO3 Film
- 1 March 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (3A) , L281
- https://doi.org/10.1143/jjap.34.l281
Abstract
Amorphous AgSbO3 films prepared by RF sputtering under O2 gas plasma and by subsequent postannealing at 500° C in O2 gas flow were found to be novel transparent and electroconductive amorphous semiconductors. The optical band gap of the films was ∼2.3 eV. The electrical conductivity was ∼10-1 Ω-1· cm-1 at room temperature and its temperature dependence showed thermal activation-type behavior with an activation energy of ∼0.23 eV. Hall measurements indicated n-type conduction. Concentration of carrier electrons and the Hall mobility at room temperature of the sample were ∼3×1017 cm-3 and ∼7 cm2·V-1·s-1, respectively. The value of the mobility was close to that of the polycrystalline films ( ∼8 cm2·V-1·s-1).Keywords
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