Four-wave mixing in bulk GaAs microcavities at room temperature
- 7 October 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (15) , 2240-2242
- https://doi.org/10.1063/1.117140
Abstract
We studied pico- and femtosecond degenerate four-wave mixing in bulk GaAs Fabry–Pérot microcavities at room temperature. For wavelengths below the GaAs band edge, a cavity with a finesse of approximately 20 yields an enhancement of the diffracted signal by more than two orders of magnitude as compared to a cavityless GaAs layer of the same thickness (685 nm). The cavity-enhanced nonlinearity of the interband transition results in a diffraction efficiency η≊0.5% for 150 pJ pulses with a duration of 900 fs at 878 nm, being 400 times larger than that for the bare GaAs reference sample.Keywords
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