Reliability of gate oxide grown on nitrogen-implanted Si substrates
- 9 December 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (24) , 3701-3703
- https://doi.org/10.1063/1.117194
Abstract
Direct nitrogen implant into Si substrate prior to gate oxidation has been proposed to grow multiple gate oxide thicknesses on a single wafer. In this letter, we have studied the reliability of gate oxide grown on nitrogen-implanted Si substrate. The effects of implant doses, sacrificial oxide thicknesses, and gate oxide thicknesses on gate oxide reliability have been investigated. It was found that there is a tradeoff between oxide thickness control and gate oxide reliability.Keywords
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