p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applications
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
An integrated p-i-n diode for use in SiGe BiCMOS technology applications has been developed. The device may be used into the MMW frequency rangeKeywords
This publication has 2 references indexed in Scilit:
- X-band SiGe monolithic control circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si and SiGe millimeter-wave integrated circuitsIEEE Transactions on Microwave Theory and Techniques, 1998