Processing and properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films by pulsed laser deposition

27 March 1995

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (13) , 1611-1613
https://doi.org/10.1063/1.113868

Abstract

In situ thin films of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3, (PMN-PT), with composition x=0.1, 0.3, 0.35, and 0.4, were deposited on MgO(100) substrates by pulsed laser deposition. The optimum conditions to form (100) oriented PMN-PT perovskite phase were at substrate temperatures in the range of 535 to 575 °C with an oxygen pressure of 200 mTorr. The Mg content in PMN-PT films was found to be essential to the formation of perovskite phase. Heterostructures of PMN-PT/La0.5Sr0.5CoO3 (LSCO) films were prepared on MgO(100) substrates to evaluate the dielectric properties of the films. The dielectric constant of PMN and PMN-PT films ranged from 1000 to 3800 at 10 kHz measured at room temperature. The highest dielectric constant was obtained from PMN films with 99% perovskite phase.

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