66 GHz 2:1 static frequency divider using 100 nm metamorphic enhancement HEMT technology
- 4 July 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (14) , 716-717
- https://doi.org/10.1049/el:20020496
Abstract
A static frequency divider with a maximum operating frequency of up to 66 GHz was developed for applications in high-speed digital systems. To the authors' knowledge, this is the highest operation frequency obtained for a static divider based on high electron mobility transistor (HEMT) technology. The complete circuit has a power consumption of 450 mW at supply voltages Vcc=2 V and Vss=−3 V. The input signal is single-ended. The differential output driver is designed in current mode logic (CML) and is able to drive a 50 Ω external load.Keywords
This publication has 3 references indexed in Scilit:
- 75 GHz ECL static frequency divider using InAlAs/InGaAsHBTsElectronics Letters, 2001
- 80 GHz 4:1 frequency divider IC using non-self-alignedInP/InGaAs heterostructure bipolar transistorsElectronics Letters, 2000
- 2–46.5 GHz quasi-static 2:1 frequency dividerICusing InAlAs/InGaAs/InP HEMTsElectronics Letters, 1997